Contact to
ICS Convention Design, Inc.
Sumitomo Corp. Jinbocho Bldg., 3-24
Kanda-Nishikicho,
Chiyoda-ku, Tokyo 101-8449, Japan
E-mail:
inc4@ics-inc.co.jp
Fax: +81-3-3292-1811
Tel: +81-3-3219-3541
List of Poster Presentation
Nanotech in Japan
No.
Presentation Title
Presenter's Name
Affiliation
Country
P-01
Morphic Approaches Toward Establishing Emerging Image Processing Architectures for Beyond CMOS Nano-electronic Devices--- learning from biological systems
Andrew Kilinga Kikombo
Hokkaido University
Japan
P-02
Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique
Jun Chen
National Institute for Materials Science
Japan
P-03
Short channel effects on FinFETs depending on fin width
Yusuke Kobayashi
Tokyo Institute of Technology
Japan
P-04
High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy
Daisuke Kosemura
Meiji Univ.
Japan
P-05
Electrical characteristics of self-assembled mesoporous silica film with silylation hardening
Yasuhisa Kayaba
Research Center for Nanodevices and Systems
Japan
P-06
Nanometer Shallow Doping of As in Strained Si/Relaxed SiGe
Shuhei Hara
Keio University
Japan
P-07
a Ta2O5 solid-electrolyte switch for programmable logic application
Naoki Banno
NEc Corporation
Japan
P-08
New Nonvolatile Memory Effect of Metal Nano Gap Junction
Yasuhisa Naitoh
National Institute of Advanced Industrial Science
Japan
P-09
Nanogap gold electrodes by electroless gold plating toward single electron transistor
Yuhsuke Yasutake
Tokyo Institute of Technology
Japan
P-10
Fabrication and characterization of a silicon nanowire quantum dot
Shaoyun Huang
RIKEN
Japan
P-11
Integration, Assembly and Doping of Nanocrystalline Silicon Quantum Dots
Tetsuya Ishikawa
Tokyo Institute of Technology
Japan
P-12
Silicon-based Quantum Information Devices
Gento Yamahata
Tokyo Institute of Technology
Japan
P-13
High density and high uniformity InAs quantum dot
Takeru Amano
National Institute of Advanced Industrial Science and Technology
Japan
P-14
Perpendicular Magnetic Tunnel Junction with RE-TM alloy and MgO(100) tunneling barrier layer prepared at room temperature
Hideto Ohmori
Tokyo Institute of Technology
Japan
P-15
Magneto-optical Kerr effect in 100 nm-size "spin valve" pillars with transparent electrode.
Nobuhiko Funabashi
NHK Science & Technical Reserch Labolatories
Japan
P-16
Fabrication of Carbon-encapsulated Magnetic Metal Nano-particles by Using Arc-discharge in Organic Solvent
Naota Sugiyama
Tokyo Institute of Technology
Japan
P-17
Electrode material dependence of resistance switching properties in CoO resistance random access memory
Hisashi Shima
National Institute of Advanced Industrial Science and Technology
Japan
P-18
Epitaxial growth and characterization of Germanium-based ferromagnetic semiconductor thin films for silicon spintronics
Yusuke Shuto
The University of Tokyo
Japan
P-19
Fabrication technique of Si- and Ge-based full-Heusler alloys for half-metallic source/drain of spin MOSFETs
Yota Takamura
Tokyo Institute of Technology
Japan
P-20
NEMs Memory Devices for Future Integrated Systems
Tasuku Nagami
Tokyo Institute of Technology
Japan
P-21
High-Performance Organic Field-Effect Transistors using Liquid Crystalline Organic Semiconductors
Takeshi Yasuda
Kyushu University
Japan
P-22
Super Growth:Developing Industrial SWNT Mass Production and its Applications
Satoshi Yasuda
Research Center for Advanced Carbon Materials, AIST
Japan
P-23
Low temperature growth and LSI application of carbon nanotubes
Daisuke Yokoyama
Waseda university
Japan
P-24
Conducting-Core/Insulating-Shell Fullerene Nanowhiskers for Nanoelectronics
Mingsheng Xu
National Institute for Materials Science
Japan
P-25
Carbon nanotubes as building blocks of quantum-dot nanodevices
Koji Ishibashi
RIKEN
Japan
P-26
Two Functions as Single Hole Transistor and Resonant Tunneling Transistor in One Single-Walled Carbon Nanotube Transistor
Takafumi Kamimura
National Institute of Advanced Industrial Science and Technology
Japan
P-27
Electric-field-screening length in thin graphite
Hisao Miyazaki
AIST
Japan
P-28
Effect of Oxygen Gas Addition to C2F6/H2 plasma on the Structure of Carbon Nanowalls
Wakana Takeuchi
Nagoya University
Japan
P-29
Functionalized Organic Nanotubes as Nano-containers and -channels for Biomacromolecules
Naohiro Kameta
National Institute of Advanced Industrial Science and Technology (AIST)
Japan
P-30
Inn Growth by Plasma-Assisted Molecular-Beam Epitaxy with Indium Monolayer Insertion
Yong-zhao Yao
National Institute for Materials Science, Japan
Japan
P-31
High-quality hexagonal boron nitride crystals synthesized at atmospheric pressure using Ni based solvent
Yoichi Kubota
National Institute for Materials Science
Japan
P-32
Synthesis of high crystalline InN/ZnO heterostructure by insertion of interface nanostructure
Ohgaki Takeshi
National Institute for Materials Science
Japan
P-33
Multiple-scanning-probe microscope: a novel measurement tool of nanoscale signal transfer
Osamu Kubo
National Institute for Materials Science
Japan
P-34
Polymerization of Metallofullerenes Induced by Electron Injection from an STM Tip
Kazunori Ohashi
Nagoya University
Japan
P-35
a Novel Fabrication of Piezoresistive Nanocantilevers Using Spin-on Diffusion Method
Yonggang Jiang
Tohoku University
Japan
P-36
Conductive polymer recording media for MEMS-based multiprobe data storage system.
Shinya Yoshida
Tohoku University
Japan
P-37
Terahertz Near-field Microprobe for Local Spectroscopy
Kentaro Iwami
Tohoku University
Japan
P-38
Giant Plasticity of Silicon Nanocontact duringTensile Test under TEM Observation
Tadashi Ishida
Institute of Industrial Science, University of Tokyo
Japan
P-39
Gated vertical-ultrathin-film field electron emitter array
Tomoya Yoshida
National Institute of Advanced Industrial Science and Technology (AIST)
Japan
P-40
Low temperature patterning of BaTiO3 by Ink-Jet deposition
Hajime Wagata
Materials and Structures Laboratory, Tokyo Institute of Technology
Japan
P-41
Synthesis of Well Dispersed Magnetite Nanoparticles Using Hydrothermal Treatment
Kazunori Nakagawa
Tokyo Institute of Technology
Japan
P-42
Spin-spray plated MnZn-ferrite films for conducted noise suppressors
Subramani Ailoor K
Tokyo Institute of Technology
Japan
P-43
Composite Structure and Size Effect of Barium Titanate Nanoparticles
Takuya Hoshina
Tokyo Institute of Technology
Japan
P-44
Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Tunable Electronics
Tomoaki Yamada
Swiss Federal Institute of Technology EPFL, and Tokyo Institute of Technology
Japan
P-45
Bioactive Titanate Nano-mesh on Ti-based Bulk Metallic glass by Using Hydrothermal-electrochemical technique
Naota Sugiyama
Tokyo Institute of Technology
Japan
P-46
Nano-structure anti-reflective lens for wide-area and low-cost production
Kazuma Kurihara
National Institute of Advanced Industrial Science and Technology (AIST)
Japan
P-47
Nano patterning originated from dislocations using femtosecond laser irradiation
Shingo Kanehira
Innovative Collaboration Center, Kyoto U.
Japan
P-48
Wet nanotechnology : nano-functional-structures fabrication in aqua
Nozomu Matsukawa
Advanced Technology Research Laboratory
Japan
P-49
The Three-Dimensional Nano-Electromechanical Tool Fabrications by FIB-CVD for the Nano-Factory Creation
Reo Kometani
The University of Tokyo
Japan
P-50
Inter-chip Wireless Interconnection using Silicon Integrated Antennas
Kentaro Kimoto
Research Center for Nanodevices and Systems
Japan
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