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ICS Convention Design, Inc.
Sumitomo Corp. Jinbocho Bldg., 3-24
Kanda-Nishikicho,
Chiyoda-ku, Tokyo 101-8449, Japan
E-mail: inc4@ics-inc.co.jp
Fax: +81-3-3292-1811
Tel: +81-3-3219-3541
List of Poster Presentation

Nanotech in Japan

No. Presentation Title Presenter's Name Affiliation Country
P-01 Morphic Approaches Toward Establishing Emerging Image Processing Architectures for Beyond CMOS Nano-electronic Devices--- learning from biological systems Andrew Kilinga Kikombo Hokkaido University Japan
P-02 Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique Jun Chen National Institute for Materials Science Japan
P-03 Short channel effects on FinFETs depending on fin width Yusuke Kobayashi Tokyo Institute of Technology Japan
P-04 High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy Daisuke Kosemura Meiji Univ. Japan
P-05 Electrical characteristics of self-assembled mesoporous silica film with silylation hardening Yasuhisa Kayaba Research Center for Nanodevices and Systems Japan
P-06 Nanometer Shallow Doping of As in Strained Si/Relaxed SiGe Shuhei Hara Keio University Japan
P-07 a Ta2O5 solid-electrolyte switch for programmable logic application Naoki Banno NEc Corporation Japan
P-08 New Nonvolatile Memory Effect of Metal Nano Gap Junction Yasuhisa Naitoh National Institute of Advanced Industrial Science Japan
P-09 Nanogap gold electrodes by electroless gold plating toward single electron transistor Yuhsuke Yasutake Tokyo Institute of Technology Japan
P-10 Fabrication and characterization of a silicon nanowire quantum dot Shaoyun Huang RIKEN Japan
P-11 Integration, Assembly and Doping of Nanocrystalline Silicon Quantum Dots Tetsuya Ishikawa Tokyo Institute of Technology Japan
P-12 Silicon-based Quantum Information Devices Gento Yamahata Tokyo Institute of Technology Japan
P-13 High density and high uniformity InAs quantum dot Takeru Amano National Institute of Advanced Industrial Science and Technology Japan
P-14 Perpendicular Magnetic Tunnel Junction with RE-TM alloy and MgO(100) tunneling barrier layer prepared at room temperature Hideto Ohmori Tokyo Institute of Technology Japan
P-15 Magneto-optical Kerr effect in 100 nm-size "spin valve" pillars with transparent electrode. Nobuhiko Funabashi NHK Science & Technical Reserch Labolatories Japan
P-16 Fabrication of Carbon-encapsulated Magnetic Metal Nano-particles by Using Arc-discharge in Organic Solvent Naota Sugiyama Tokyo Institute of Technology Japan
P-17 Electrode material dependence of resistance switching properties in CoO resistance random access memory Hisashi Shima National Institute of Advanced Industrial Science and Technology Japan
P-18 Epitaxial growth and characterization of Germanium-based ferromagnetic semiconductor thin films for silicon spintronics Yusuke Shuto The University of Tokyo Japan
P-19 Fabrication technique of Si- and Ge-based full-Heusler alloys for half-metallic source/drain of spin MOSFETs Yota Takamura Tokyo Institute of Technology Japan
P-20 NEMs Memory Devices for Future Integrated Systems Tasuku Nagami Tokyo Institute of Technology Japan
P-21 High-Performance Organic Field-Effect Transistors using Liquid Crystalline Organic Semiconductors Takeshi Yasuda Kyushu University Japan
P-22 Super Growth:Developing Industrial SWNT Mass Production and its Applications Satoshi Yasuda Research Center for Advanced Carbon Materials, AIST Japan
P-23 Low temperature growth and LSI application of carbon nanotubes Daisuke Yokoyama Waseda university Japan
P-24 Conducting-Core/Insulating-Shell Fullerene Nanowhiskers for Nanoelectronics Mingsheng Xu National Institute for Materials Science Japan
P-25 Carbon nanotubes as building blocks of quantum-dot nanodevices Koji Ishibashi RIKEN Japan
P-26 Two Functions as Single Hole Transistor and Resonant Tunneling Transistor in One Single-Walled Carbon Nanotube Transistor Takafumi Kamimura National Institute of Advanced Industrial Science and Technology Japan
P-27 Electric-field-screening length in thin graphite Hisao Miyazaki AIST Japan
P-28 Effect of Oxygen Gas Addition to C2F6/H2 plasma on the Structure of Carbon Nanowalls Wakana Takeuchi Nagoya University Japan
P-29 Functionalized Organic Nanotubes as Nano-containers and -channels for Biomacromolecules Naohiro Kameta National Institute of Advanced Industrial Science and Technology (AIST) Japan
P-30 Inn Growth by Plasma-Assisted Molecular-Beam Epitaxy with Indium Monolayer Insertion Yong-zhao Yao National Institute for Materials Science, Japan Japan
P-31 High-quality hexagonal boron nitride crystals synthesized at atmospheric pressure using Ni based solvent Yoichi Kubota National Institute for Materials Science Japan
P-32 Synthesis of high crystalline InN/ZnO heterostructure by insertion of interface nanostructure Ohgaki Takeshi National Institute for Materials Science Japan
P-33 Multiple-scanning-probe microscope: a novel measurement tool of nanoscale signal transfer Osamu Kubo National Institute for Materials Science Japan
P-34 Polymerization of Metallofullerenes Induced by Electron Injection from an STM Tip Kazunori Ohashi Nagoya University Japan
P-35 a Novel Fabrication of Piezoresistive Nanocantilevers Using Spin-on Diffusion Method Yonggang Jiang Tohoku University Japan
P-36 Conductive polymer recording media for MEMS-based multiprobe data storage system. Shinya Yoshida Tohoku University Japan
P-37 Terahertz Near-field Microprobe for Local Spectroscopy Kentaro Iwami Tohoku University Japan
P-38 Giant Plasticity of Silicon Nanocontact duringTensile Test under TEM Observation Tadashi Ishida Institute of Industrial Science, University of Tokyo Japan
P-39 Gated vertical-ultrathin-film field electron emitter array Tomoya Yoshida National Institute of Advanced Industrial Science and Technology (AIST) Japan
P-40 Low temperature patterning of BaTiO3 by Ink-Jet deposition Hajime Wagata Materials and Structures Laboratory, Tokyo Institute of Technology Japan
P-41 Synthesis of Well Dispersed Magnetite Nanoparticles Using Hydrothermal Treatment Kazunori Nakagawa Tokyo Institute of Technology Japan
P-42 Spin-spray plated MnZn-ferrite films for conducted noise suppressors Subramani Ailoor K Tokyo Institute of Technology Japan
P-43 Composite Structure and Size Effect of Barium Titanate Nanoparticles Takuya Hoshina Tokyo Institute of Technology Japan
P-44 Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Tunable Electronics Tomoaki Yamada Swiss Federal Institute of Technology EPFL, and Tokyo Institute of Technology Japan
P-45 Bioactive Titanate Nano-mesh on Ti-based Bulk Metallic glass by Using Hydrothermal-electrochemical technique Naota Sugiyama Tokyo Institute of Technology Japan
P-46 Nano-structure anti-reflective lens for wide-area and low-cost production Kazuma Kurihara National Institute of Advanced Industrial Science and Technology (AIST) Japan
P-47 Nano patterning originated from dislocations using femtosecond laser irradiation Shingo Kanehira Innovative Collaboration Center, Kyoto U. Japan
P-48 Wet nanotechnology : nano-functional-structures fabrication in aqua Nozomu Matsukawa Advanced Technology Research Laboratory Japan
P-49 The Three-Dimensional Nano-Electromechanical Tool Fabrications by FIB-CVD for the Nano-Factory Creation Reo Kometani The University of Tokyo Japan
P-50 Inter-chip Wireless Interconnection using Silicon Integrated Antennas Kentaro Kimoto Research Center for Nanodevices and Systems Japan

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