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ICS Convention Design, Inc.
Sumitomo Corp. Jinbocho Bldg., 3-24
Kanda-Nishikicho,
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E-mail: inc4@ics-inc.co.jp
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INC4 - List of Poster Presentation

No. Presentation Title Presenter's Name Affiliation Country
P-01 Advanced Metrology for Nanoelectronics at NIST Jack Martinez NIST USA
P-02 The National Institute of Standards and Technology: Stimulating U.S. Innovation and Industrial Competitiveness Dave Seiler NIST USA
P-03 Applications of Combinatorial Methodologies to Advanced Materials Martin Green NIST USA
P-04 Institute for Nanoelectronics Discovery and Exploration (INDEX): Technical Overview Ji Ung Lee University at Albany-SUNY USA
P-05 INDEX-the Institute for Nanoelectronics Discovery and Exploration Ji Ung Lee University of Albany-SUNY USA
P-06 Materials, Nanostructures, Devices and Architectures at the FENA Center Kosmas Galatsis University of California, Los Angele USA
P-07 The next switch at the Western Institute Of Nanoelectonics Kosmas Galatsis University of California, Los Angele USA
P-08 Nanopatterning for beyond CMOS Nanoelectronics and Nanoarchitectures Kosmas Galatsis University of California, Los Angele USA
P-09 Aligned Carbon Nanotubes-Full Wafer Processing Kosmas Galatsis University of California, Los Angele USA
P-10 Synthesis of Copper Compounds that Exhibit Rotational Motion as a State Variable Kosmas Galatsis University of California, Los Angele USA
P-11 Electrical Transport through Single Layer and Few Layer Graphene Junctions Kosmas Galatsis University of California, Los Angele USA
P-12 The Network for Computational Nanotechnology: Science and Cyberinfrastructure Mark Lundstrom Purdue University NcN Center USA
P-13 NCN@Purdue: Exploratory Research on New Digital Switching Devices Mark Lundstrum Purdue University NcN Center USA
P-14 Southwest Academy of Nanoelectronics Leonard Register SWAn and The University of Texas at Austin USA
P-15 Resonant-Injection-Augmented Field-Effect Transistor (RIAFET) for Low-Voltage Switching Leonard Register SWAn and The University of Texas at Austin USA
P-16 Recent advances in graphene Erik Henriksen Columbia University USA
P-17 Infrared magnetospectroscopy of mono- and bi-layer graphene Erik Henrikson Columbia Nanocenter NRI Program USA
P-18 CEA-LETI, a European R&D Organization in Micro- and Nanotechnologies Michel Brillouet CEA-LETI France
P-19 The MINATEC Advanced Characterization Center Michel Brillouet CEA-LETI France
P-20 Analysis of gene expression in complex samples by optronic detection Michel Brillouet CEA-LETI France
P-21 IMEC's Nanoelectronics Programs - MM and MTM Akihiko Ishitani IMEC Japan
P-22 Development of methodologies for characterizing individual carbon nanotubes and silicon nanowires for use in nanoelectronics technology Thomas Hantschel IMEC Belgium
P-23 Experimental Assessment of the Viability of Carbon Nanotubes as Future via Interconnects Daire Cott IMEC Belgium
P-24 Emerging Nanopatterning Methods in Europe: Projects NaPa and NaPANIL Jouni Ahopelto VTt Micro and Nanoelectronics Finland
P-25 Nanoelectronics in Lithuania Romualdas Navickas Representative Member Lithuania in SSC ENIAC, Vilnius Gediminas Technical Unive Lithuania
P-26 Nanowire-based One-Dimensional Electronics (NODE) Claes Thelander Lund University Sweden
P-27 Introduction of the Korean National Semiconductor-Nano R&D Project and the Organization(COSAR/KSIA) JongWan Ko KSIA/COSAR Korea
P-28 Electrical Bio Chip based on NSI C chips Young June Park Seoul National University Korea
P-29 Nanotechnology R&D and Effective Engagement of Public Mizuki Sekiya National Institute of Advanced Industrial Science and Technology Japan
P-30 Environmental hazard assessment of chemicals Mitsuko Ishihara-Sugano Toshiba Corporation Japan
P-31 FACETs - Scientific Goals and Relevance to Nanotechnology Abigail Morrison RIKEn Brain Science Institute Japan
P-32 Materials Science in Nara Institute of Science and Technology for Future Nanoelectronics Yoshihiro Todokoro Nara Institute of Science and Technology Japan
P-33 Demonstration of LSI On-Chip Optical Clock Distribution with Bonded Chip Structures Kenichi Nishi MIRAI-Selete Japan
P-34 Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique Takashi Sekiguchi National Institute for Materials Science Japan
P-35 Carbon Nanotube LSI Via Interconnects Tatsuhiro Nozue MIRAI-Selete Japan
P-36 High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition Yuichi Yamazaki MIRAI-Selete Japan
P-37 One who controls the interfaces at nanometer level will conquer new devices. Michiko Yoshitake National Institute for Materials Science Japan
P-38 Self-assembled molecular wire for multi-value transistor Yutaka Wakayama National Institute for Materials Science Japan
P-39 Carbon Nanotube Transistors for Printed Electronics Kazuki Ihara Nano Electronics Research Laboratories, NEC Corporation Japan
P-40 Detection of Lipid Bilayers Using Field-Effect Devices Chiho Kataoka National Institute for Materials Science Japan
P-41 Biological nanofabrication of key-structures for electron devices. Shigeo Yoshii Panasonic Japan
P-42 Enabling Technologies to Extend Electron Beam Mask Writing for Future Lithography. Nobuo Miyamoto NuFlare Technology, INc. Japan
P-43 Photocatalytic activity and UV shielding property of silica coated TiO2, ZnO and CeO2 nanoparticles by a novel microwave irradiation method Takeshi Furusawa Utsunomiya University, Graduate School of Engineering Japan
P-44 Multilayer film materials having high thermal conductivity and high anisotropy Hidemichi Fujiwara The Furukawa Electric Co., LTD Japan
P-45 Molecular property and molecule assembly mechanism Tomonori Watanabe Individual Japan

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